2SJ633 no.7421-1/4 sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn7421 2SJ633 package dimensions unit : mm 2083b [2SJ633] o1003 ts im ta-3882 p-channel silicon mosfet dc / dc converter applications any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. 1 : gate 2 : drain 3 : source 4 : drain sanyo : tp 5.0 6.5 0.85 0.7 0.6 1.5 5.5 7.0 0.8 1.6 7.5 0.5 1.2 2.3 0.5 1 23 4 2.3 2.3 features ? low on-resistance. ? ultrahigh-speed switching. ? 4v drive. package dimensions unit : mm 2092b [2SJ633] 1 : gate 2 : drain 3 : source 4 : drain sanyo : tp-fa 6.5 2.3 0.5 1.5 5.5 0.8 7.0 1.2 2.5 5.0 0.85 0.5 1.2 0 to 0.2 2.3 2.3 0.6 12 4 3
2SJ633 no.7421-2/4 specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss --60 v gate-to-source voltage v gss 20 v drain current (dc) i d -- 4 a drain current (pulse) i dp pw 10 m s, duty cycle 1% --16 a allowable power dissipation p d 1w tc=25 c15w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0 --60 v zero-gate voltage drain current i dss v ds =--60v, v gs =0 --1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0 10 m a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --1.2 --2.6 v forward transfer admittance ? yfs ? v ds =--10v, i d =--2a 1.5 3 s r ds (on)1 i d =--2a, v gs =--10v 280 365 m w static drain-to-source on-state resistance r ds (on)2 i d =--2a, v gs =--4v 405 565 m w input capacitance ciss v ds =--20v, f=1mhz 365 pf output capacitance coss v ds =--20v, f=1mhz 39 pf reverse transfer capacitance crss v ds =--20v, f=1mhz 30 pf turn-on delay time t d (on) see specified test circuit. 9 ns rise time t r see specified test circuit. 45 ns turn-off delay time t d (off) see specified test circuit. 33 ns fall time t f see specified test circuit. 41 ns total gate charge qg v ds =--30v, v gs =--10v, i d =--4a 9 nc gate-to-source charge qgs v ds =--30v, v gs =--10v, i d =--4a 1.7 nc gate-to-drain miller charge qgd v ds =--30v, v gs =--10v, i d =--4a 1.7 nc diode forward voltage v sd i s =--4a, v gs =0 --0.9 --1.2 v switching time test circuit pw=10 m s d.c. 1% 0v --10v v in p. g 50 w g s i d = --2a r l =15 w v dd = --30v v out 2SJ633 v in d
2SJ633 no.7421-3/4 static drain-to-source on-state resistance, r ds (on) -- m gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- m drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a case temperature, tc -- c i d -- v gs it05822 0 0 -- 4 -- 5 -- 6 -- 7 -- 8 -- 2 -- 1 -- 2 -- 1 -- 3 -- 6 -- 5 -- 4 -- 3 v ds = --10v tc= --25 c tc=75 c 25 c --25 c 75 c 25 c i d -- v ds it05810 --2.0 --1.5 --3.0 --3.5 --2.5 --1.0 --0.5 0 --4.0 0 --1.0 --0.5 --2.0 --1.5 --3.0 --3.5 --2.5 --4.0 v gs = --3.0v --3.5v --4.0v --5.0v --6.0v --8.0v --10.0v diode forward voltage, v sd -- v forward drain current, i f -- a drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf drain current, i d -- a forward transfer admittance, ? y fs ? -- s it05826 i f -- v sd --0.6 --0.8 --0.4 --1.0 --1.2 --0.2 --0.01 --0.1 2 5 --1.0 --10 3 7 2 5 3 2 3 7 5 7 2 10 --1.0 5 23 23 5 7 3 5 2 7 3 5 7 3 2 100 sw time -- i d it05816 --0.1 --25 c 25 c tc=75 c 0 100 5 7 2 3 5 7 2 1000 3 10 --30 --10 --15 --20 --25 -- 5 ciss, coss, crss -- v ds it05817 ciss coss crss f=1mhz it05825 ? y fs ? -- i d --0.01 23 23 7 57 5 7 5 --1.0 --0.1 2 --10 5 7 5 7 3 2 2 1.0 0.1 10 3 75 c 3 v ds = --10v v gs =0 tc= --25 c 25 c v dd = --30v v gs = --10v t d (on) t d (off) t r t f 0 --2 --4 --6 700 750 800 100 150 200 250 300 350 400 450 500 550 600 650 --8 --20 --10 --12 --14 --16 --18 r ds (on) -- v gs it05823 tc=25 c i d = --2a 300 350 400 450 500 550 600 650 700 750 800 0 150 200 50 100 250 r ds (on) -- tc it05824 --60 --20 --40 20 0 40 60 80 100 120 140 i d = -- 2 a, v gs = -- 10v i d = -- 2 a, v gs = -- 4v
2SJ633 no.7421-4/4 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of october, 2003. specifications and information herein are subject to change without notice. ps drain-to-source voltage, v ds -- v drain current, i d -- a ambient temperature, ta -- c allowable power dissipation, p d -- w case temperature, tc -- c allowable power dissipation, p d -- w total gate charge, qg -- nc gate-to-source voltage, v gs -- v a s o 2 3 5 7 2 2 3 5 7 3 --10 --1.0 --0.1 --0.1 23 57 23 57 7 25 --100 --1.0 --10 3 it05828 operation in this area is limited by r ds (on). --10 -- 4 -- 3 -- 2 -- 1 -- 8 -- 9 -- 7 -- 6 -- 5 0 012345678910 v gs -- qg it05827 v ds = --30v i d = --4a i d = --4a i dp = --16a 10 m s 100 m s 10ms 1ms dc operation tc=25 c single pulse 1.2 1.0 0.4 0.2 0.6 0.8 0 0 20 40 60 80 100 120 140 160 p d -- ta it05829 20 15 10 5 0 0 20 40 60 80 100 120 140 160 p d -- tc it05830 no heat sink
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